Day 1 :
Massachusetts Institute of Technology, USA
Time : 10:00-10:30
Peter L Hagelstein is a principal investigator in the Research Laboratory of Electronics (RLE) and an Associate Professor at Massachusetts Institute of Technology (MIT). He received a bachelor of science and a master of science degree in 1976, then a Doctor of Philosophy degree in Electrical Engineering in 1981, from MIT. He was a staff member of Lawrence Livermore National Laboratory from 1981 to 1985 before joining the MIT faculty in the Department of Electrical Engineering and Computer Science in 1986.
In 1989 Fleischmann and Pons announced the observation of excess heat in a PdD electrochemistry experiment, which was immediately controversial. Shortly after, Fleischmann and Pons were discredited, along with all other researchers who continued in the field. Flash forward by a quarter of a century, and some things have changed, while others have not. Not only has the basic excess effect been seen now in hundreds if not thousands of experiments, but the technology has moved forward to the point where commercialization might be considered. From a large number of different kinds of experiments (some involving excess heat, and some involving other anomalies such as collimated x-ray emission) a picture is suggested as to what is going on microscopically. However, the researchers in the field remain discredited, and there has been very little support. It has long been recognized that the anomalies are inconsistent with textbook condensed matter physics and nuclear physics. At present there is no accepted explanation for the anomalies. We have been working with augmented spin-boson models for some years now in which coherent energy exchange occurs between quantum systems with highly mismatched quanta. We have proposed a new condensed matter Hamiltonian which is augmented to include internal nuclear degrees of freedom, which is thought by us to be applicable systematically to all of the anomalies. We propose to give an overview of both the relevant experimental results and theoretical ideas in this talk.
Northeastern University, USA
Keynote: Topological insulators, novel superconductors, and 2D atomically thin films beyond graphene
Time : 10:50-11:20
Arun Bansil is a University Distinguished Professor in physics at Northeastern University. He served at the US Department of Energy managing the Theoretical Condensed Matter Physics program (2008-10), is as an Academic Editor of the international Journal of Physics and Chemistry of Solids, the Founding Director of Northeastern University’s Advanced Scientific Computation Center, and serves on various international editorial boards and commissions. He has authored/co-authored over 260 technical articles, 18 volumes of conference proceedings, covering a wide range of topics in theoretical condensed matter and materials physics, and a major book, X-Ray Compton Scattering (Oxford University Press, Oxford, 2004).
The author will discuss some of our recent results aimed at understanding the electronic structure and spectroscopy of novel superconductors, topological materials, and atomically thin 2D films. Illustrative examples include: (i) How by exploiting electronic structure techniques we have been able to predict and understand the characteristics of many new classes of binary, ternary and quaternary topologically interesting materials, including topologically crystalline insulators; (ii) How atomically thin ‘beyond graphene’ 2D materials such as silicene, germanene, stanene, and MoSe2 offer exciting new possibilities for manipulating electronic structures and provide novel applications, platforms; (iii) Asymmetry of the Scanning Tunneling (STM) spectrum of the cuprate high-Tc superconductors between positive and negative bias voltages and the extent to which it reflects strong correlation effects; (iv) Character of the doped holes in the curpate superconductor La-Sr-Cu-O as revealed by the analysis of doping dependent high-resolution Compton scattering studies.
University of Connecticut, USA
Keynote: ZnO nanostructures and memristors
Time : 11:20-11:50
Mehdi Anwar is currently working on (a) ZnO Nanowire based UV detection and energy harvesting, (b) III-Nitrides and Oxide Semiconductor -based high power and high temperature quantum cascade lasers and (c) RF Oxide Semiconductor and III-Nitride HFETs and (d) memristors, to name a few. His team pioneered the design of low noise antimony-based-compound-semiconductor (ABCS) HEMTs with quaternary buffer/barrier and ternary, with a measured fT around 200FGHz and Fmin of 0.82dB at 15GHz. He has presented over 40 plenary and invited talks at national/international conferences, published over 240 archival journal publications, conference proceedings and book chapters and edited 9 volumes. He serves as an Editor of IEEE JEDS and served as an Editor of the IEEE Transactions on Electron Devices (2001 – 2010) and serves as the conference chair of the international conference on Terahertz Physics, Devices and Systems, at SPIE Defense, Security and Sensing (2009-2015). He is an SPIE Fellow.
Zinc oxide (ZnO) is a unique wide bandgap biocompatible material system exhibiting both semiconducting and piezoelectric properties that grows in a diverse group of nanostructure morphologies. Bulk ZnO has a bandgap of 3.37 eV that corresponds to emissions in the ultraviolet (UV) spectral band. Highly ordered vertical arrays of ZnO nanowires (NWs) have been grown on substrates including silicon, SiO2, GaN, and sapphire using a metal organic chemical vapor deposition (MOCVD) growth process. Co-axial core-shell nanostructures demonstrating unique properties with enhanced detectability of chemical species have been grown. Structural and optical properties of the grown vertically aligned ZnO NW arrays characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) will be presented and discussed. We will introduce the growth of horizontal ZnO nanowires and present the state-of-the-art technology in the fabrication of memristors – the fourth circuit element. A discussion on the operation of memristors using the concept of conductive filament formation supported by both measurement of I-V and modeling will follow.