Puneet Srivastava
Massachusetts Institute of Technology (MIT), USA
Title: GaN HEMTs for next generation electronics
Biography
Biography: Puneet Srivastava
Abstract
Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs)has been identified as essential components for realizing efficient, compact, high power switching systems and high power amplifiers at high frequencies for low loss power conversion and transmission. In the recent years, significant advancements have been made towards GaN-on-Si power devices due to the lower cost and large size availability of the Si substrate. Si substrate, however, presents constraints such as limited voltage handling capabilities, which are more apparent at elevated temperatures. In my talk, I will discuss a novel technology solution of Si substrate engineering to mitigate the high voltage and high temperature restrictions imposed by Si for power electronics applications with an improved device figure of merit. Several kilo Volt devices have been achieved in a cost effective way with high temperature capabilities required by various demanding applications such as downhole tools in oil and gas industry, automobiles and photovoltaics among others. The second part of my talk will focus on developing a unique technology with a deep sub-micron gated large periphery GaN-HEMTs with high power density for future kilo Watt Radio Frequency (RF) amplifier systems.
Speaker Presentations