Puneet Srivastava
Massachusetts Institute of Technology (MIT), USA
Biography
Puneet Srivastava received his PhD degree from IMEC-Belgium in 2012. During his PhD, he worked on the fabrication and technology integration of GaN-on-Si HEMTs for power switching applications. Since September 2012, he has been working as a Postdoctoral Associate in Electrical Engineering and Computer Science at MIT, USA with Prof. Tomás Palacios in the area of high frequency GaN-electronics. He has authored/co-authored over 40 international publications and holds 2 patents. He serves as an Editor for IETE-Technical Review and a Member of IEEE and IEEE Electron Device Society (EDS). He is a Reviewer of various journals such as IEEE Electron Device Letters, IEEE Transaction on Electron devices among others.
Abstract
Abstract : GaN HEMTs for next generation electronics
Speaker Presentations